mSiTrz

mSiTrz >99% – High-Purity Host and Electron Transport Layer Material for OLED Applications

Noctiluca proudly offers mSiTrz, a high-purity (>99% HPLC) compound essential for advanced organic light-emitting diode (OLED) applications. Formally known as 2-phenyl-4,6-bis(3-(triphenylsilyl)phenyl)-1,3,5-triazine, with the molecular formula C₅₇H₄₃N₃Si₂ and CAS number 2252416-90-1, mSiTrz is meticulously synthesized to meet the rigorous demands of modern OLED technologies. Recognized as a premium host material and electron transport layer (ETL) compound, mSiTrz delivers exceptional charge transport capabilities, robust thermal stability, and superior photoluminescent properties. These characteristics make it indispensable for the development of cutting-edge optoelectronic devices.

Molecular Structure and Properties of mSiTrz

mSiTrz is an organic molecule with a molecular weight of 826.14 g/mol, presented as a white powder or crystalline substance. It demonstrates an absorption maximum (λmax) at 302 nm and a photoluminescent emission peak (λₘₐₓ) at 375 nm in dilute solution and 370 nm in film, providing strong optical performance. With a HOMO level of 6.9 eV and LUMO level of 2.8 eV, mSiTrz supports efficient energy transfer and charge transport, positioning it as a vital component in OLED devices demanding high brightness and energy efficiency.

Key Features of mSiTrz

• Exceptional Purity and Quality: Noctiluca’s mSiTrz undergoes a meticulous sublimation process and high-performance liquid chromatography (HPLC) purification, achieving a purity level exceeding 99%. This ensures consistent performance and reliability in OLED applications that demand precise material specifications.
• Optimized for Host and ETL Applications: mSiTrz is specifically designed to enhance electron transport and energy transfer in OLED devices. Its carefully calibrated HOMO/LUMO alignment facilitates efficient charge balance, ensuring optimal device performance and long-term stability.
• Superior Photoluminescent Characteristics: With a photoluminescent emission peak at 375 nm in dilute solution and 370 nm in film, mSiTrz provides reliable and precise energy transfer, making it suitable for advanced display and lighting applications. This emission ensures high colour accuracy and brightness in optoelectronic devices.
• Thermal Stability and Robustness: With a glass transition temperature (Tg) of 108 °C and a decomposition temperature (Td) of 465 °C, mSiTrz offers excellent thermal stability, maintaining structural and functional integrity under demanding operating conditions. This robustness supports extended operational lifetimes for devices incorporating mSiTrz.
• Versatile Processing Capabilities: mSiTrz is compatible with a variety of fabrication methods, including vacuum deposition and solution processing, allowing seamless integration into research settings and industrial-scale OLED manufacturing processes.

The Role of mSiTrz in Advanced OLED Technologies

mSiTrz plays a pivotal role in the development of high-performance OLED devices by serving as both a host material and electron transport layer. Its molecular structure supports efficient charge mobility and energy transfer, enhancing device brightness, energy efficiency, and operational stability. This makes mSiTrz an essential material for applications ranging from high-resolution displays to advanced energy-efficient lighting systems.

Conclusion

Noctiluca’s mSiTrz >99% exemplifies our dedication to providing high-purity materials designed for advanced OLED and optoelectronic applications. With exceptional photoluminescent properties, thermal stability, and versatile processing capabilities, mSiTrz empowers researchers and manufacturers to push the boundaries of OLED technology. Discover mSiTrz’s potential for your optoelectronic projects and learn how Noctiluca’s materials drive innovations in next-generation display and lighting solutions.